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1 m e m o r y all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301- www.maxwell.com low voltage 4 megabit (512k x 8-bit) eeprom 79lv0408 ?2005 maxwell technologies all rights reserved. 01.11.05 rev 7 ? four 128k x 8-bit eeproms mcm r ad -p ak ? radiation-hardened against natural space radiation total dose hardness: - > 100 krad (si), depending upon space mission excellent single event effects - sel > 120 mev/mg/cm 2 - seu > 90 mev/mg/cm 2 read mode - seu = 18 mev/mg/cm 2 write mode package: - 40 pin r ad -p ak ? flat pack - 40 pin x-ray pak tm flat pack - 40 pin rad-tolerant flat pack high speed: -200 and 250 ns access times available data polling and ready/busy signal software data protection write protection by res pin high endurance - 10,000 erase/write (in page mode), - 10 year data retention page write mode: 1 to 128 byte page low power dissipation - 88 mw/mhz active mode - 440 w standby mode d escription : maxwell technologies? 79lv0408 multi-chip module (mcm) memory features a greater than 100 krad (si) total dose toler- ance, depending upon space mission. using maxwell technol- ogies? patented radiation-hardened r ad -p ak ? mcm packaging technology, the 79lv0408 is the first radiation- hardened 4 megabit mcm eeprom for space applications. the 79lv0408 uses four 1 megabit high-speed cmos die to yield a 4 megabit product. the 79lv0408 is capable of in-sys- tem electrical byte and page programmability. it has a 128 bytes page programming function to make its erase and write operations faster. it also features data polling and a ready/ busy signal to indicate the completion of erase and program- ming operations. in the 79lv0408, hardware data protection is provided with the res pin, in addition to noise protection on the we signal. software data protection is implemented using the jedec optional standard algorithm. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. in a geo orbit, the r ad -p ak ? package provides greater than 100 krad (si) radiation dose tolerance. this prod- uct is available with screening up to maxwell technologies self-defined class k. 128k x 8 128k x 8 128k x 8 128k x 8 i/ o 0-7 a 0-16 we r/ b res oe ce 1 ce 2 ce 3 ce 4 f eatures : logic diagram
m e m o r y 2 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 1. v in min = -3.0v for pulse width < 50 ns . t able 1. 79lv0408 p in d escription p in s ymbol d escription 16-9, 32-31, 28, 30, 8, 33, 7, 36, 6 a0 to a16 address input 17-19, 22-26 i/o0 to i/o7 data input/output 29 oe output enable 2, 3, 39, 38 ce1-4 chip enable 1 through 4 34 we write enable 1, 27, 40 vcc power supply 4, 20, 21, 37 vss ground 5 rdy/busy ready/busy 35 res reset t able 2. 79lv0408 a bsolute m aximum r atings p arameter s ymbol m in m ax u nit supply voltage v cc -0.6 7.0 v input voltage v in -0.5 1 7.0 v package weight rp 23 grams rt 10 thermal resistance ( rp package) tjc 7.3 c/w operating temperature range t opr -55 125 c storage temperature range t stg -65 150 c t able 3. 79lv0408 r ecommended o perating c onditions p arameter s ymbol m in m ax u nit supply voltage v cc 3.0 3.6 v input voltage res _pin v il v ih v h -0.3 1 2.2 v cc -0.5 1. v il min = -1.0v for pulse width < 50 ns 0.8 v cc +0.3 v cc +1 v v v case operating temperature t c -55 125 c
m e m o r y 3 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 t able 4. 79lv0408 c apacitance 1 (t a = 25 c, f = 1 mhz) p arameter s ymbol m in m ax u nit input capacitance: v in = 0 v 1 we ce 1-4 oe a 0-16 1. guaranteed by design. c in -- -- -- -- 24 6 24 24 pf output capacitance: v out = 0 v 1 c out 48 pf t able 5. d elta p arameters p arameter c ondition i cc1 + 10% of value in table 6 i cc2 + 10% of value in table 6 i cc3 + 10% of value in table 6 i cc4 + 10% of value in table 6 t able 6. 79lv0408 dc e lectrical c haracteristics (v cc = 3.3v 10%, t a = -55 to +125c) p arameter t est c ondition s ymbol s ubgroups m in m ax u nits input leakage current v cc = 5.5v, v in = 5.5v 1 i il 1, 2, 3 a ce 1-4 -- 2 1 oe , we -- 8 a 0-16 -- 8 output leakage current v cc = 5.5v, v out = 5.5v/0.4v i lo 1, 2, 3 -- 8 a standby v cc current ce = v cc i cc1 -- 80 a ce = v ih i cc2 -- 4 ma operating v cc current 2 i out = 0ma, duty = 100%, cycle = 1 s at v cc = 5.5v i cc3 1, 2, 3 -- 15 ma i out = 0ma, duty = 100%, cycle = 150ns at v cc = 5.5v i cc4 1, 2, 3 -- 50 input voltage res _pin v il 1, 2, 3 -- 0.8 v v ih 2.2 -- v h v cc -0.5 -- output voltage i ol = 2.1 ma v ol 1, 2, 3 -- 0.4 v i oh = -0.4 ma v oh 2.4 --
m e m o r y 4 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 1. i li on res = 100 ua max. 2. only on ce\ active. t able 7. 79lv0408 ac e lectrical c haracteristics for r ead o perations 1 (v cc = 3.3v 10%, t a = -55 to +125c) 1. test conditions: input pulse levels - 0.4v to 2.4v; input rise and fall times < 20ns; output load - 1 ttl gate + 100pf (inclu ding scope and jig); reference levels for measuring timing - 0.8v/1.8v. p arameter s ymbol s ubgroups m in m ax u nit address access time ce = oe = v il , we = v ih -200 -250 t acc 9, 10, 11 -- -- 200 250 ns chip enable access time oe = v il , we = v ih -200 -250 t ce 9, 10, 11 0 0 200 250 ns output enable access time ce = v il , we = v ih -200 -250 t oe 9, 10, 11 0 0 110 120 ns output hold to address change ce = oe = v il , we = v ih -200 -250 t oh 9, 10, 11 0 0- -- -- ns output disable to high-z 2 ce = v il , we = v ih -200 -250 2. t df and t dfr are defined as the time at which the output becomes an open circuit and data is no longer driven. t df 9, 10, 11 0 0 60 60 ns ce = oe = v il , we = v ih -200 -250 t dfr 9, 10, 11 0 0 300 350 res to output delay ce = oe = v il , we = v ih 3 -200 -250 3. guaranteed by design. t rr 9, 10, 11 -- -- 520 550 ns t able 8. 79lv0408 ac e lectrical c haracteristics for w rite o perations (v cc = 3.3v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nit address setup time -200 -250 t as 9, 10, 11 0 0 -- -- ns
m e m o r y 5 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 chip enable to write setup time (we controlled) -200 -250 t cs 9, 10, 11 0 0 -- -- ns write pulse widthce controlled -200 -250 we controlled -200 -250 t cw t wp 9, 10, 11 200 250 200 250 -- -- -- -- ns address hold time -200 -250 t ah 9, 10, 11 125 150 -- -- ns data setup time -200 -250 t ds 9, 10, 11 100 100 -- -- ns data hold time -200 -250 t dh 9, 10, 11 10 10 -- -- ns chip enable hold time (we controlled) -200 -250 t ch 9, 10, 11 0 0 -- -- ns write enable to write setup time (ce controlled) -200 -250 t ws 9, 10, 11 0 0 -- -- ns write enable hold time (ce controlled) -200 -250 t wh 9, 10, 11 0 0 -- -- ns output enable to write setup time -200 -250 t oes 9, 10, 11 0 0 -- -- ns output enable hold time -200 -250 t oeh 9, 10, 11 0 0 -- -- ns write cycle time 2 -200 -250 t wc 9, 10, 11 -- -- 15 15 ms data latch time -200 -250 t dl 9, 10, 11 700 750 -- -- ns byte load window -200 -250 t bl 9, 10, 11 100 100 -- -- s t able 8. 79lv0408 ac e lectrical c haracteristics for w rite o perations (v cc = 3.3v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nit
m e m o r y 6 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 byte load cycle -200 -250 t blc 9, 10, 11 1 1 -- -- s time to device busy -200 -250 t db 9, 10, 11 150 150 -- -- ns write start time 3 -200 -250 t dw 9, 10, 11 150 150 -- -- ns res to write setup time -200 -250 t rp 9, 10, 11 100 100 -- -- s v cc to res setup time 4 -200 -250 t res 9, 10, 11 1 1 -- -- s 1. use this divice in a longer cycle than this value. 2. t wc must be longer than this value unless polling techniques or rdy/busy are used. this device automatically completes the internal write operation within this value. 3. next read or write operation can be initiated after t dw if polling techniques or rdy/busy are used. 4. guaranteed by design. t able 9. 79lv0408 m ode s election 1, 2 1. x = don?t care. 2. refer to the recommended dc operating conditions. p arameter ce 3 3. for ce 1-4 only one ce can be used (?on?) at a time. oe we i/o res rdy/busy read v il v il v ih d out v h high-z standby v ih x x high-z x high-z write v il v ih v il d in v h high-z --> v ol deselect v il v ih v ih high-z v h high-z write inhibit x x v ih -- x -- xv il x--x-- data polling v il v il v ih data out (i/o7) v h v ol program x x x high-z v il high-z t able 8. 79lv0408 ac e lectrical c haracteristics for w rite o perations (v cc = 3.3v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nit
m e m o r y 7 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 f igure 1. r ead t iming w aveform
m e m o r y 8 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 f igure 2. b yte w rite t iming w aveform (1) (we c ontrolled )
m e m o r y 9 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 f igure 3. b yte w rite t iming w aveform (2) (ce c ontrolled )
m e m o r y 10 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 f igure 4. p age w rite t iming w aveform (1) (we c ontrolled )
m e m o r y 11 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) f igure 6. d ata p olling t iming w aveform
m e m o r y 12 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 f igure 7. s oftware d ata p rotection t iming w aveform (1) ( in protection mode ) f igure 8. s oftware d ata p rotection t iming w aveform (2) ( in non - protection mode ) toggle bit waveform eeprom a pplication n otes this application note describes the programming procedures for each eeprom module (four in each mcm) and details of various techniques to preserve data protection. automatic page write page-mode write feature allows from 1 to 128 bytes of data to be written into the eeprom in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (a0 to a6). loading the first byte of data, the data load window opens 30 s for the second byte. in the same manner each additional byte of data can be loaded within 30 s. in case ce and we are kept high for 100 s after data input, the eeprom enters erase and write mode automatically and only the input data are written into the eeprom.
m e m o r y 13 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 we ce pin operation during a write cycle, addresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce . data polling data polling function allows the status of the eeprom to be determined. if the eeprom is set to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from i/o 7 to indicate that the eeprom is per- forming a write operation. rdy/busy signal rdy/busy signal also allows a comparison operation to determine the status of the eeprom. the rdy/busy signal has high impedance except in write cycle and is lowered to v ol after the first write signal. at the-end of a write cycle, the rdy/busy signal changes state to high impedance. res signal when res is low, the eeprom cannot be read and programmed. therefore, data can be protected by keeping res low when v cc is switched. res should be kept high during read and programming because it doesn?t provide a latch function. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation.
m e m o r y 14 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mis- take. to prevent this phenomenon, the eeprom has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. be careful not to allow noise of a width of more than 20ns on the control pins. 2. data protection at v cc on/off when v cc is turned on or off, noise on the control pins generated by external circuits, such as cpus, may turn the eeprom to programming mode by mistake. to prevent this unintentional programming, the eeprom must be kept in unprogrammable state during v cc on/off by using a cpu reset signal to res pin. res should be kept at v ss level when v cc is turned on or off. the eeprom breaks off programming operation when res becomes low, programming operation doesn?t finish correctly in case that res falls low during programming operation. res should be kept high for 10 ms after the last data input. 3. software data protection the software data protection function is to prevent unintentional programming caused by noise generated by external circuits. in software data protection mode, 3 bytes of data must be input before write data as follows. these bytes can switch the non- protection mode to the protection mode. 10ms min
m e m o r y 15 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 software data protection mode can be canceled by inputting the following 6 bytes. then, the eeprom turns to the non-protec- tion mode and can write data normally. however, when the data is input in the canceling cycle, the data cannot be written.
m e m o r y 16 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 f40-01 note: all dimensions in inches 40 p in r ad -p ak ? p ackage d imensions s ymbol d imension m in n om m ax a 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 d -- 0.850 0.860 e 0.985 0.995 1.005 e1 -- -- 1.025 e2 0.890 0.895 -- e3 0.000 0.050 -- e 0.040 bsc l 0.380 0.390 0.400 q 0.214 0.245 0.270 s1 0.005 0.038 -- n40 pin #1 id
m e m o r y 17 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 40 p in x-r ay -p ak tm f lat p ackage d imensions note: all dimensions in inches s ymbol d imension m in n om m ax a 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 d 0.840 0.850 0.860 e 0.985 0.995 1.005 e2 -- 0.785 -- e3 -- 0.105 -- e 0.040 bsc l 0.340 0.350 0.400 q 0.050 0.065 0.075 s1 -- 0.035 -- n40
m e m o r y 18 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 40 p in r ad -t olerant f lat p ackage d imensions s ymbol d imension m in n om m ax a 0.202 0.224 0.246 b 0.013 0.015 0.022 c 0.006 0.008 0.010 d -- 0.850 0.860 e 0.985 0.995 1.005 e1 -- -- 1.025 e2 0.890 0.895 -- e3 0.000 0.050 -- e 0.040 bsc l 0.380 0.390 0.400 q 0.190 0.220 0.270 s1 0.005 0.038 -- n40 note: all dimensions in inches
m e m o r y 19 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved. low voltage 4 megabit (512k x 8-bit) eeprom mcm 79lv0408 01.11.05 rev 7 important notice: these data sheets are created using the chip manufacturers published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the use of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies. must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts. product ordering options

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